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ROHM SCT3080KW7TL
Discrete Semiconductor Products

SCT3080AW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 29 A, 650 V, 0.08 OHM, TO-263 (D2PAK)

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENNotes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET+65
ROHM SCT3080KW7TL
Discrete Semiconductor Products

SCT3080AW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 29 A, 650 V, 0.08 OHM, TO-263 (D2PAK)

Deep-Dive with AI

DocumentsTechnical Data Sheet ENNotes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET+65

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT3080AW7TL
Current - Continuous Drain (Id) @ 25°C29 A
Drain to Source Voltage (Vdss)650 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]48 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]571 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Rds On (Max) @ Id, Vgs104 mOhm
Supplier Device PackageTO-263-7
Vgs(th) (Max) @ Id5.6 V

SCT3080 Series

650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

PartVgs(th) (Max) @ IdSupplier Device PackagePackage / CaseMounting TypeRds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°COperating TemperatureDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]FET TypeDrive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsPower Dissipation (Max) [Max]TechnologyPower Dissipation (Max)QualificationGrade
ROHM SCT3080KW7TL
Rohm Semiconductor
SCT3080AW7TL
5.6 V
TO-263-7
D2PAK (7 Leads + Tab)
TO-263-8
TO-263CA
Surface Mount
104 mOhm
29 A
175 °C
650 V
48 nC
571 pF
N-Channel
ROHM SCT3060ARC14
Rohm Semiconductor
SCT3080KRC14
5.6 V
TO-247-4L
TO-247-4
Through Hole
104 mOhm
31 A
175 °C
1.2 kV
N-Channel
18 V
785 pF
60 nC
165 W
ROHM SCT4036KRC15
Rohm Semiconductor
SCT3080ARC15
5.6 V
TO-247-4L
TO-247-4
Through Hole
104 mOhm
30 A
175 °C
650 V
48 nC
571 pF
N-Channel
18 V
SiC (Silicon Carbide Junction Transistor)
134 W
ROHM SCT3060ARC14
Rohm Semiconductor
SCT3080ARC14
5.6 V
TO-247-4L
TO-247-4
Through Hole
104 mOhm
30 A
175 °C
650 V
48 nC
571 pF
N-Channel
18 V
134 W
ROHM SCT4026DEHRC11
Rohm Semiconductor
SCT3080ALGC11
5.6 V
TO-247N
TO-247-3
Through Hole
104 mOhm
30 A
175 °C
650 V
48 nC
571 pF
N-Channel
18 V
134 W
ROHM SCT3080KW7TL
Rohm Semiconductor
SCT3080KW7TL
5.6 V
TO-263-7
D2PAK (7 Leads + Tab)
TO-263-8
TO-263CA
Surface Mount
104 mOhm
30 A
175 °C
1.2 kV
N-Channel
785 pF
60 nC
159 W
SCT4026DRHRC15
Rohm Semiconductor
SCT3080ARHRC15
5.6 V
TO-247-4L
TO-247-4
Through Hole
104 mOhm
30 A
175 °C
650 V
48 nC
571 pF
N-Channel
18 V
MOSFET (Metal Oxide)
134 W
AEC-Q101
Automotive
ROHM SCT4036KRC15
Rohm Semiconductor
SCT3080KRHRC15
5.6 V
TO-247-4L
TO-247-4
Through Hole
104 mOhm
31 A
175 °C
1.2 kV
N-Channel
18 V
785 pF
60 nC
165 W
MOSFET (Metal Oxide)
AEC-Q101
Automotive
SCT4026DRHRC15
Rohm Semiconductor
SCT3080KRC15
5.6 V
TO-247-4L
TO-247-4
Through Hole
104 mOhm
31 A
175 °C
1.2 kV
N-Channel
18 V
785 pF
60 nC
165 W
SiC (Silicon Carbide Junction Transistor)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 15.73
10$ 11.10
100$ 8.49
500$ 8.23
Digi-Reel® 1$ 13.96
10$ 12.30
100$ 10.64
500$ 9.64
N/A 884$ 13.74
Tape & Reel (TR) 1000$ 8.23
NewarkEach 1$ 14.29
10$ 10.44
25$ 10.43
50$ 10.14
100$ 8.63

Description

General part information

SCT3080 Series

SCT3080KR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

Technical Article

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

What is a Thermal Model? (SiC Power Device)

Thermal Design

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Gate-source voltage behaviour in a bridge configuration

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Thermal Design

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

TO-263-7L Inner Structure

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

How to Use PSIM Models

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Thermal Design

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Part Explanation

Application Note

TO-263-7L Explanation for Marking

Package Information

How to Create Symbols for PSpice Models

Models

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

TO-263-7L Package Dimensions

Package Information

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

White Paper

Improvement of switching loss by driver source

Technical Article

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Precautions When Measuring the Rear of the Package with a Thermocouple

Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

Anti-Whisker formation

Package Information

Condition of Soldering

Package Information

SiC MOSFET Layout Design Considerations

Technical Article

How to Use PLECS Models

Technical Article

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

Design Method for Comparator-less Miller Clamp Circuits

Schematic Design & Verification

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Two-Resistor Model for Thermal Simulation

Thermal Design

Notes for Calculating Power Consumption:Static Operation

Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

TO-263-7L Taping Information

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Types and Features of Transistors

Application Note

Basics of Thermal Resistance and Heat Dissipation

Thermal Design

4 Steps for Successful Thermal Designing of Power Devices

White Paper

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Thermal Design

About Export Administration Regulations (EAR)

Export Information

Moisture Sensitivity Level

Package Information

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Compliance of the ELV directive

Environmental Data

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

How to Use Thermal Models

Thermal Design

How to Use LTspice&reg; Models

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

800V Three-Phase Output LLC DC/DC Resonant Converter

Schematic Design & Verification

What Is Thermal Design

Thermal Design