Discrete Semiconductor Products

CSD17303Q5

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30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM

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Search across all available documentation for this part.

DocumentsAvoid Common Mistakes When Selecting And Designing With Power MOSFETs Tips for Successfully Paralleling Power MOSFETs +8

Discrete Semiconductor Products

CSD17303Q5

Active

Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM

Deep-Dive with AI

DocumentsAvoid Common Mistakes When Selecting And Designing With Power MOSFETs Tips for Successfully Paralleling Power MOSFETs +8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CSD17303Q5

Current - Continuous Drain (Id) @ 25°C	32 A, 100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.2 W
Rds On (Max) @ Id, Vgs [Max]	2.4 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.6 V

CSD17303Q5 Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id
Texas Instruments CSD17303Q5	10 V	-8 V	8-VSON-CLIP (5x6)	N-Channel	8-PowerTDFN	32 A 100 A	2.4 mOhm	8 V	3 V	-55 °C	150 °C	3420 pF	3.2 W	23 nC	Surface Mount	30 V	MOSFET (Metal Oxide)	1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	301	$ 1.00
	Cut Tape (CT)	1	$ 1.68
		10	$ 1.40
		100	$ 1.11
		500	$ 0.94
		1000	$ 0.80
	Digi-Reel®	1	$ 1.68
		10	$ 1.40
		100	$ 1.11
		500	$ 0.94
		1000	$ 0.80
	Tape & Reel (TR)	2500	$ 0.76
		5000	$ 0.73
		12500	$ 0.70
Texas Instruments	LARGE T&R	1	$ 1.26
		100	$ 1.04
		250	$ 0.75
		1000	$ 0.56

Description

General part information

CSD17303Q5 Series

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Documents

Technical documentation and resources

CSD17303Q5

Deep-Dive with AI

CSD17303Q5

Deep-Dive with AI

Technical Specifications

CSD17303Q5 Series

Pricing

Description

CSD17303Q5 Series

Documents

Avoid Common Mistakes When Selecting And Designing With Power MOSFETs

Tips for Successfully Paralleling Power MOSFETs

Using MOSFET Transient Thermal Impedance Curves In Your Design

Ringing Reduction Techniques for NexFET High Performance MOSFETs

Power Management Guide 2018 (Rev. R)

Using MOSFET Safe Operating Area Curves in Your Design

30V N-Channel NexFET Power MOSFET datasheet (Rev. B)

QFN and SON PCB Attachment (Rev. C)

Semiconductor and IC Package Thermal Metrics (Rev. D)

MOSFET Support and Training Tools (Rev. F)

CSD17303Q5 Series