CSD17303Q5 Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id
Texas Instruments CSD17303Q5	10 V	-8 V	8-VSON-CLIP (5x6)	N-Channel	8-PowerTDFN	32 A 100 A	2.4 mOhm	8 V	3 V	-55 °C	150 °C	3420 pF	3.2 W	23 nC	Surface Mount	30 V	MOSFET (Metal Oxide)	1.6 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Key Features

• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point-of-LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsOptimized for Synchronous FET ApplicationsNexFET is a trademark of Texas Instruments.Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point-of-LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsOptimized for Synchronous FET ApplicationsNexFET is a trademark of Texas Instruments.

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.