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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N1893 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 0.01 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 800 mW |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 27.29 | |
| 100 | $ 25.34 | |||
| Microchip Direct | N/A | 1 | $ 27.29 | |
| Newark | Each | 100 | $ 25.34 | |
| 500 | $ 24.36 | |||
Description
General part information
2N1893-Transistor Series
This specification covers the performance requirements for NPN silicon, low-power , 2N720A, 2N1893 and 2N1893S transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/182, two levels of product assurance are provided for die (JANHC and JANKC). Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.The device package for the encapsulated device type are as follows: Similar to TO-18 and TO-5 for through hole and (UB ) surface mount versions. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/182.
Documents
Technical documentation and resources