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STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STBR3012G2-TR

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STMicroelectronics

HIGH VOLTAGE RECTIFIER FOR BRIDGE APPLICATIONS

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENSTBR3012G2-TR | Datasheet+5
STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STBR3012G2-TR

Active
STMicroelectronics

HIGH VOLTAGE RECTIFIER FOR BRIDGE APPLICATIONS

Deep-Dive with AI

DocumentsProduct Change Notice ENSTBR3012G2-TR | Datasheet+5

Technical Specifications

Parameters and characteristics for this part

SpecificationSTBR3012G2-TR
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr2 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Speed [Min]200 mA, 500 ns
Supplier Device PackageD2PAK HV
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1410$ 3.51
NewarkEach (Supplied on Cut Tape) 1$ 3.68
10$ 2.91
25$ 2.70
50$ 2.48
100$ 2.27
250$ 2.14
500$ 2.00
1000$ 1.91

Description

General part information

STBR3012 Series

The high quality design of this diode has produced a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications.

Thanks to its ultra-low conduction losses, the STBR3012 is especially suitable for use as input bridge diode in battery chargers.