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PDIP / 8
Integrated Circuits (ICs)

MIC5021YN

Active
Microchip Technology

A HIGH OR LOW SIDE SINGLE NON-INV GATE DRVR, PDIP-8 8 PDIP .300IN TUBE ROHS COMPLIANT: YES

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PDIP / 8
Integrated Circuits (ICs)

MIC5021YN

Active
Microchip Technology

A HIGH OR LOW SIDE SINGLE NON-INV GATE DRVR, PDIP-8 8 PDIP .300IN TUBE ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMIC5021YN
Channel TypeSingle
Driven ConfigurationHigh-Side
Gate TypeN-Channel MOSFET, IGBT
Input TypeNon-Inverting
Logic Voltage - VIL, VIH0.8 V, 2 V
Mounting TypeThrough Hole
Number of Drivers1
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case0.3 in
Package / Case8-DIP
Package / Case7.62 mm
Rise / Fall Time (Typ) [custom]400 ns
Rise / Fall Time (Typ) [custom]400 ns
Supplier Device Package8-PDIP
Voltage - Supply [Max]36 V
Voltage - Supply [Min]12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.40
25$ 3.66
100$ 3.33
Microchip DirectTUBE 1$ 4.40
25$ 3.66
100$ 3.33
1000$ 2.79
5000$ 2.57
10000$ 2.39
NewarkEach 100$ 3.43

Description

General part information

MIC5021 Series

The MIC5021 high-side MOSFET gate driver is designed to operate at frequencies up to 100 kHz (5 kHz PWM for 2% to 100% duty cycle) and is an ideal choice for high speed applications such as motor control, SMPS (switch mode power supplies), and applications using IGBTs. The MIC5021 can also operate as a circuit breaker with or without automatic retry.

A rising or falling edge on the input results in a current source pulse or sink pulse on the gate output. This output current pulse can turn on a 2,000 pF MOSFET in approximately 550 ns. The MIC5021 then supplies a limited current (< 2 mA), if necessary, to maintain the output state.

An overcurrent comparator with a trip voltage of 50 mV makes the MIC5021 ideal for use with a current sensing MOSFET. An external low value resistor may be used instead of a sensing MOSFET for more precise overcurrent control. An optional external capacitor placed from the CT pin to ground may be used to control the current shutdown duty cycle (dead time) from 20% to <1%. A duty cycle from 20% to about 75% is possible with an optional pull-up resistor from CT to VDD.