Discrete Semiconductor Products

TSM80N1R2CL C0G

Obsolete

MOSFET N-CH 800V 5.5A TO262S

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 5.5A TO262S

Technical Specifications

Parameters and characteristics for this part

Specification	TSM80N1R2CL C0G

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.4 nC
Input Capacitance (Ciss) (Max) @ Vds	685 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-262S (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
Taiwan Semiconductor Corporation TSM80N1R2CH	Through Hole	800 V	110 W	MOSFET (Metal Oxide)	10 V	19.4 nC	4 V	IPAK TO-251-3 Short Leads TO-251AA	685 pF	1.2 Ohm	N-Channel	TO-251 (IPAK)	30 V	5.5 A	-55 °C	150 °C
Taiwan Semiconductor Corporation TSM80N1R2CL C0G	Through Hole	800 V	110 W	MOSFET (Metal Oxide)	10 V	19.4 nC	4 V		685 pF	1.2 Ohm	N-Channel	TO-262S (I2PAK)	30 V	5.5 A	-55 °C	150 °C
Taiwan Semiconductor Corporation TSM80N1R2CL	Through Hole	800 V	110 W	MOSFET (Metal Oxide)	10 V	19.4 nC	4 V	I2PAK TO-262-3 Long Leads TO-262AA	685 pF	1.2 Ohm	N-Channel	I2PAK	30 V	5.5 A	-55 °C	150 °C
Taiwan Semiconductor Corporation TSM80N950CH C5G	Through Hole	800 V	110 W	MOSFET (Metal Oxide)	10 V	19.6 nC	4 V	IPAK TO-251-3 Short Leads TO-251AA	691 pF	950 mOhm	N-Channel	TO-251 (IPAK)	30 V	6 A	-55 °C	150 °C
Taiwan Semiconductor Corporation TSM80N950CI C0G	Through Hole	800 V		MOSFET (Metal Oxide)	10 V	19.6 nC	4 V	TO-220-3 Full Pack Isolated Tab	691 pF	950 mOhm	N-Channel	ITO-220AB	30 V	6 A	-55 °C	150 °C	25 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 5.5A (Tc) 110W (Tc) Through Hole TO-262S (I2PAK)

Technical documentation and resources

No documents available