Discrete Semiconductor Products

TSM80N950CI

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Taiwan Semiconductor Corporation

800V, 6A, SINGLE N-CHANNEL POWER

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Discrete Semiconductor Products

TSM80N950CI

Active

Taiwan Semiconductor Corporation

800V, 6A, SINGLE N-CHANNEL POWER

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TSM80N950CI

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19.6 nC
Input Capacitance (Ciss) (Max) @ Vds	691 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

TSM80 Series

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max) [Max]
Taiwan Semiconductor Corporation TSM80N400CF C0G	400 mOhm	51 nC	ITO-220S	30 V	10 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	4 V	150 °C	-55 °C	800 V	1848 pF	12 A	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N950CI	950 mOhm		ITO-220	30 V	10 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab	4 V	150 °C	-55 °C	800 V		6 A	N-Channel	Through Hole	25 W	19.6 nC	691 pF
Taiwan Semiconductor Corporation TSM80N1R2CH	1.2 Ohm	19.4 nC	TO-251	30 V	10 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	4 V	150 °C	-55 °C	800 V		5.5 A	N-Channel	Through Hole	110 W		685 pF	IPAK
Taiwan Semiconductor Corporation TSM80N400CF	400 mOhm	51 nC	ITO-220S	30 V	10 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	4 V	150 °C	-55 °C	800 V	1848 pF	12 A	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N08CZ C0G			TO-220	20 V	10 V	MOSFET (Metal Oxide)	TO-220-3	4 V	150 °C	-55 °C	75 V	3905 pF		N-Channel	Through Hole					113.6 W
Taiwan Semiconductor Corporation TSM80N1R2CL C0G	1.2 Ohm	19.4 nC	TO-262S (I2PAK)	30 V	10 V	MOSFET (Metal Oxide)	TO-262-3 Short Leads I2PAK	4 V	150 °C	-55 °C	800 V		5.5 A	N-Channel	Through Hole	110 W		685 pF
Taiwan Semiconductor Corporation TSM80N1R2CL	1.2 Ohm	19.4 nC	I2PAK	30 V	10 V	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	4 V	150 °C	-55 °C	800 V		5.5 A	N-Channel	Through Hole	110 W		685 pF
Taiwan Semiconductor Corporation TSM80N950CH C5G	950 mOhm		TO-251	30 V	10 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	4 V	150 °C	-55 °C	800 V		6 A	N-Channel	Through Hole	110 W	19.6 nC	691 pF	IPAK
Taiwan Semiconductor Corporation TSM80N950CI C0G	950 mOhm		ITO-220AB	30 V	10 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab	4 V	150 °C	-55 °C	800 V		6 A	N-Channel	Through Hole	25 W	19.6 nC	691 pF
Taiwan Semiconductor Corporation TSM80N1R2CH C5G	1.2 Ohm	19.4 nC	TO-251	30 V	10 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	4 V	150 °C	-55 °C	800 V		5.5 A	N-Channel	Through Hole	110 W		685 pF	IPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.00
	Tube	4000	$ 3.00

Description

General part information

TSM80 Series

N-Channel 800 V 6A (Tc) 25W (Tc) Through Hole ITO-220

Documents

Technical documentation and resources

No documents available