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TEXTISCSD86336Q3DT
Discrete Semiconductor Products

FDMS8570S

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 25V, 60A, 2.8MΩ

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TEXTISCSD86336Q3DT
Discrete Semiconductor Products

FDMS8570S

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 25V, 60A, 2.8MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS8570S
Current - Continuous Drain (Id) @ 25°C24 A
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs425 nC
Input Capacitance (Ciss) (Max) @ Vds2825 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W, 48 W
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 544$ 0.55
544$ 0.55
544$ 0.55
544$ 0.55

Description

General part information

FDMS8558SDC Series

This N-Channel SyncFET™ is produced using ON Semiconductor Semiconductor’s advanced PowerTrench®process. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.