Discrete Semiconductor Products

JANS1N6640US/TR

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DIODE GEN PURP 50V 300MA D-5D

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Discrete Semiconductor Products

Active

DIODE GEN PURP 50V 300MA D-5D

Technical Specifications

Parameters and characteristics for this part

Specification	JANS1N6640US/TR

Current - Average Rectified (Io)	300 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SQ-MELF, D
Qualification	MIL-PRF-19500/609
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5D
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Grade	Voltage - Forward (Vf) (Max) @ If
Microchip Technology JAN1N6640	4 ns	100 nA	300 mA	200 mA 500 ns	50 V	MIL-PRF-19500/609	Through Hole	Standard	175 ░C	-65 C	D Axial	D-5D	Military	1 V
Microchip Technology JANTX1N6640US/TR	4 ns	100 nA	300 mA	200 mA 500 ns	50 V	MIL-PRF-19500/609	Surface Mount	Standard	175 ░C	-65 C	SQ-MELF D	D-5D	Military	1 V
Microchip Technology JANS1N6640US/TR	4 ns	100 nA	300 mA	200 mA 500 ns	50 V	MIL-PRF-19500/609	Surface Mount	Standard	175 ░C	-65 C	SQ-MELF D	D-5D	Military	1 V
Microchip Technology 1N6640US	4 ns	100 nA	300 mA	200 mA 500 ns	75 V		Surface Mount	Standard	175 ░C	-65 C	SQ-MELF D	D-5D		1 V
Microchip Technology 1N6640

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General part information

Diode 50 V 300mA Surface Mount D-5D

Technical documentation and resources

No documents available