
Discrete Semiconductor Products
TSM1NB60CH C5G
ActiveTaiwan Semiconductor Corporation
MOSFETS 600V, 1A, SINGLE N-CHANNEL POWER MOSFET
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Discrete Semiconductor Products
TSM1NB60CH C5G
ActiveTaiwan Semiconductor Corporation
MOSFETS 600V, 1A, SINGLE N-CHANNEL POWER MOSFET
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM1NB60CH C5G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 138 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) [Max] | 39 W |
| Rds On (Max) @ Id, Vgs | 10 Ohm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TSM1NB60 Series
N-Channel 600 V 1A (Tc) 39W (Tc) Through Hole TO-251 (IPAK)
Documents
Technical documentation and resources