TSM1NB60 Series

Catalog

MOSFET TRANSISTOR, N CHANNEL, 1 A, 600 V, 8 OHM, 10 V, 3.5 V ROHS COMPLIANT: YES

Part	Power Dissipation (Max) [Max]	FET Type	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package
Taiwan Semiconductor Corporation TSM1NB60CP ROG	39 W	N-Channel	MOSFET (Metal Oxide)	30 V	138 pF	4.5 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	150 °C	-55 °C	1 A	600 V	6.1 nC	Surface Mount	10 Ohm
Taiwan Semiconductor Corporation TSM1NB60CH C5G	39 W	N-Channel	MOSFET (Metal Oxide)	30 V	138 pF	4.5 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	TO-251	150 °C	-55 °C	1 A	600 V	6.1 nC	Through Hole	10 Ohm	IPAK
Taiwan Semiconductor Corporation TSM1NB60CW RPG	39 W	N-Channel	MOSFET (Metal Oxide)	30 V	138 pF	4.5 V	10 V	TO-261-4 TO-261AA	SOT-223	150 °C	-55 °C	1 A	600 V	6.1 nC	Surface Mount	10 Ohm