2N2907AUBP
ActiveSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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2N2907AUBP
ActiveSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2907AUBP |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 50 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | UB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 13.92 | |
| Microchip Direct | N/A | 1 | $ 14.98 | |
| Newark | Each | 100 | $ 13.91 | |
| 500 | $ 13.38 | |||
Description
General part information
2N2907AUBP-Transistor-PIND Series
This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources
No documents available