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TO-236AB
Discrete Semiconductor Products

NXV40UNR

Active
Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

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TO-236AB
Discrete Semiconductor Products

NXV40UNR

Active
Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNXV40UNR
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC
Input Capacitance (Ciss) (Max) @ Vds347 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)340 mW, 2.1 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.12
1000$ 0.09
N/A 35890$ 0.42
Tape & Reel (TR) 3000$ 0.07
6000$ 0.06
9000$ 0.06
15000$ 0.05
21000$ 0.05
30000$ 0.05

Description

General part information

NXV40UN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.