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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Package / Case | Mounting Type | FET Type | Power Dissipation (Max) | Technology | Supplier Device Package | Vgs (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 950 mV | SC-59 SOT-23-3 TO-236-3 | Surface Mount | N-Channel | 2.1 W 340 mW | MOSFET (Metal Oxide) | TO-236AB | 8 V | 150 °C | -55 °C | 1.5 V 4.5 V | 50 mOhm | 347 pF | 9 nC | 2.5 A | 20 V |