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SIHP23N60E-GE3
Discrete Semiconductor Products

IRF9Z24PBF

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SIHP23N60E-GE3
Discrete Semiconductor Products

IRF9Z24PBF

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9Z24PBF
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds570 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs [Max]280 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.31
50$ 1.05
100$ 0.87
500$ 0.78

Description

General part information

IRF9Z24 Series

P-Channel 60 V 11A (Tc) 60W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources