IRF9Z24 Series

Catalog

MOSFET P-CH 60V 11A D2PAK

Part	FET Type	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay General Semiconductor - Diodes Division IRF9Z24SPBF	P-Channel	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	20 V	Surface Mount	60 V	3.7 W 60 W	19 nC	280 mOhm	TO-263 (D2PAK)	11 A	570 pF	10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF9Z24STRLPBF	P-Channel	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	20 V	Surface Mount	60 V	3.7 W 60 W	19 nC	280 mOhm	TO-263 (D2PAK)	11 A	570 pF	10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF9Z24PBF-BE3	P-Channel	4 V	TO-220-3	-55 °C	175 ░C	20 V	Through Hole	60 V	60 W	19 nC	280 mOhm	TO-220AB	11 A	570 pF		MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF9Z24PBF	P-Channel	4 V	TO-220-3	-55 °C	175 ░C	20 V	Through Hole	60 V	60 W	19 nC	280 mOhm	TO-220AB	11 A	570 pF	10 V	MOSFET (Metal Oxide)