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4-DSBGA-YZB
Discrete Semiconductor Products

CSD23202W10

Active
Texas Instruments

-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 53 MOHM, GATE ESD PROTECTION

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4-DSBGA-YZB
Discrete Semiconductor Products

CSD23202W10

Active
Texas Instruments

-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 53 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD23202W10
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3.8 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-UFBGA, DSBGA
Power Dissipation (Max)1 W
Rds On (Max) @ Id, Vgs53 mOhm
Supplier Device Package4-DSBGA (1x1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-6 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.13
6000$ 0.13
9000$ 0.11
30000$ 0.11
75000$ 0.10
Texas InstrumentsLARGE T&R 1$ 0.22
100$ 0.15
250$ 0.12
1000$ 0.08

Description

General part information

CSD23202W10 Series

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.