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8-SOIC
Discrete Semiconductor Products

FDS4141

Active
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -40V, -10.8A, 13.0MΩ

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8-SOIC
Discrete Semiconductor Products

FDS4141

Active
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -40V, -10.8A, 13.0MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS4141
Current - Continuous Drain (Id) @ 25°C10.8 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds2670 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)5 W
Rds On (Max) @ Id, Vgs13 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.22
Digi-Reel® 1$ 1.22
Tape & Reel (TR) 2500$ 0.50
5000$ 0.48
12500$ 0.46
ON SemiconductorN/A 1$ 0.26

Description

General part information

FDS4141 Series

This P-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low rDS(on)and optimized BVDSScapability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

Documents

Technical documentation and resources