FDS4141 Series

P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

Catalog

P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor FDS4141	10.8 A	MOSFET (Metal Oxide)	13 mOhm	10 V 49 nC	8-SOIC	8-SOIC	3.9 mm	0.154 in	2670 pF	4.5 V 10 V	40 V	P-Channel	20 V	3 V	Surface Mount	-55 °C	150 °C	5 W

Catalog

P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

Key Features

• Max rDS(on)= 13.0mΩ at VGS= -10V, ID= -10.5A

• Max rDS(on)= 19.0mΩ at VGS= -4.5V, ID= -8.4A

• High performance trench technology for extremely low rDS(on)

• RoHS Compliant

Description

This P-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low rDS(on)and optimized BVDSScapability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.