Specification	NVGS3130NT1G

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	935 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]	600 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.4 V

NVGS3130N Series

Single N-Channel Power MOSFET 20V 5.6A 24mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Grade	Technology
ON Semiconductor NVGS3130NT1G	4.2 A	935 pF	6-TSOP	-55 °C	150 °C	AEC-Q101	Surface Mount	20 V	2.5 V 4.5 V	SOT-23-6 Thin TSOT-23-6	N-Channel	24 mOhm	20.3 nC	8 V	1.4 V	600 mW	Automotive	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Automotive Power MOSFET. 20V 5.6A 24 mOhm Single N-Channel TSOP6.AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.