NVGS3130N Series

Single N-Channel Power MOSFET 20V 5.6A 24mΩ

Catalog

Single N-Channel Power MOSFET 20V 5.6A 24mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Grade	Technology
ON Semiconductor NVGS3130NT1G	4.2 A	935 pF	6-TSOP	-55 °C	150 °C	AEC-Q101	Surface Mount	20 V	2.5 V 4.5 V	SOT-23-6 Thin TSOT-23-6	N-Channel	24 mOhm	20.3 nC	8 V	1.4 V	600 mW	Automotive	MOSFET (Metal Oxide)

Single N-Channel Power MOSFET 20V 5.6A 24mΩ

• Leading Edge Trench Technology for Low On Resistance

• Low Gate Charge for Fast Switching

• Small Size (3 x 2.75 mm) TSOP-6 Package

• AEC−Q101 Qualified and PPAP Capable

Automotive Power MOSFET. 20V 5.6A 24 mOhm Single N-Channel TSOP6.AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.