Specification	FQA62N25C

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	6280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQA62N25C Series

Power MOSFET, N-Channel, QFET®, 250 V, 62 A, 35 mΩ, TO-3P

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type
ON Semiconductor FQA62N25C	4 V	62 A	30 V	MOSFET (Metal Oxide)	6280 pF	35 mOhm	TO-3PN	-55 °C	150 °C	130 nC	SC-65-3 TO-3P-3	298 W	250 V	10 V	Through Hole	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQA62N25C Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.