FQA62N25C Series

Power MOSFET, N-Channel, QFET®, 250 V, 62 A, 35 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, QFET®, 250 V, 62 A, 35 mΩ, TO-3P

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type
ON Semiconductor FQA62N25C	4 V	62 A	30 V	MOSFET (Metal Oxide)	6280 pF	35 mOhm	TO-3PN	-55 °C	150 °C	130 nC	SC-65-3 TO-3P-3	298 W	250 V	10 V	Through Hole	N-Channel

Catalog

Power MOSFET, N-Channel, QFET®, 250 V, 62 A, 35 mΩ, TO-3P

Key Features

• 62A, 250VRDS(on)= 35mΩ(Max.) @VGS= 10 V, ID= 31A

• Low Gate Charge ( Typ. 100nC)

• Low Crss( Typ. 63.5pF)

• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.