Specification	FDP054N10

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	203 nC
Input Capacitance (Ciss) (Max) @ Vds	13280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	263 W
Rds On (Max) @ Id, Vgs [Max]	5.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDP054N10 Series

N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ

Part	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Technology	FET Type
ON Semiconductor FDP054N10	4.5 V	TO-220-3	203 nC	TO-220-3	100 V	13280 pF	10 V	-55 °C	175 ░C	120 A	20 V	263 W	Through Hole	5.5 mOhm	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.99
		10	$ 4.02
		100	$ 2.90
		500	$ 2.42
		1000	$ 2.41
Newark	Each	500	$ 2.57
ON Semiconductor	N/A	1	$ 2.22

Description

General part information

FDP054N10 Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

Package Drawing-340AT-TO-220-3LD

Package Drawing

Datasheet

Technical Data Sheet EN

Datasheet