FDP054N10 Series

N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ

Part	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Technology	FET Type
ON Semiconductor FDP054N10	4.5 V	TO-220-3	203 nC	TO-220-3	100 V	13280 pF	10 V	-55 °C	175 ░C	120 A	20 V	263 W	Through Hole	5.5 mOhm	MOSFET (Metal Oxide)	N-Channel

Catalog

N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ

Key Features

• RDS(on)= 4.6mΩ ( Typ.)@ VGS= 10V, ID= 75A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.