Specification	FDC021N30

Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.8 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDC021N30 Series

N-Channel PowerTrench® MOSFET, 30V, 6.1A, 26 mΩ

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDC021N30	SuperSOT™-6	26 mOhm	4.5 V 10 V	700 mW	6.1 A	30 V	-55 °C	150 °C	20 V	Surface Mount	10.8 nC	MOSFET (Metal Oxide)	3 V	N-Channel	SOT-23-6 Thin TSOT-23-6	710 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDC021N30 Series

This N-Channel PowerTrench MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.