FDC021N30 Series

N-Channel PowerTrench® MOSFET, 30V, 6.1A, 26 mΩ

Catalog

N-Channel PowerTrench® MOSFET, 30V, 6.1A, 26 mΩ

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDC021N30	SuperSOT™-6	26 mOhm	4.5 V 10 V	700 mW	6.1 A	30 V	-55 °C	150 °C	20 V	Surface Mount	10.8 nC	MOSFET (Metal Oxide)	3 V	N-Channel	SOT-23-6 Thin TSOT-23-6	710 pF

Catalog

N-Channel PowerTrench® MOSFET, 30V, 6.1A, 26 mΩ

Key Features

• Max rDS(on)= 26 mΩ at VGS= 10 V, ID= 6.1 A

• Max rDS(on)= 33 mΩ at VGS= 4.5 V, ID= 5.3 A

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power and Current Handling Capability in a Widely Used Surface Mount Package

• Fast Switching Speed

• RoHS Compliant

Description

This N-Channel PowerTrench MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.