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STD15N50M2AG
Discrete Semiconductor Products

STD15N50M2AG

LTB
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 500 V, 0.336 OHM TYP., 10 A MDMESH M2 POWER MOSFET IN A DPAK PACKAGE

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STD15N50M2AG
Discrete Semiconductor Products

STD15N50M2AG

LTB
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 500 V, 0.336 OHM TYP., 10 A MDMESH M2 POWER MOSFET IN A DPAK PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD15N50M2AG
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]530 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)85 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs380 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 310$ 2.52
NewarkEach (Supplied on Cut Tape) 1$ 2.62
10$ 2.05
25$ 1.90
50$ 1.74
100$ 1.59
250$ 1.58
500$ 1.36
1000$ 1.29

Description

General part information

STD15N50M2AG Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.