Specification	R8002ANX

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.7 nC
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	4.3 Ohm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

R8002ANJFRG Series

High-speed Switching, Nch 800V 1.6A, TO-252 (DPAK), Power MOSFET

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification
Rohm Semiconductor R8002KNXC7G	MOSFET (Metal Oxide)	1.6 A	150 °C	Through Hole	140 pF	TO-220-3 Full Pack	28 W	800 V	N-Channel	4.5 V	20 V	10 V	7.5 nC	4.2 Ohm	TO-220FM
Rohm Semiconductor R8002ANJFRGTL	MOSFET (Metal Oxide)	2 A	150 °C	Surface Mount	250 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	62 W	800 V	N-Channel		30 V	10 V		4.3 Ohm	LPTS	Automotive	13 nC	AEC-Q101
Rohm Semiconductor R8002ANX	MOSFET (Metal Oxide)	2 A	150 °C	Through Hole	210 pF	TO-220-3 Full Pack	35 W	800 V	N-Channel		30 V	10 V	12.7 nC	4.3 Ohm	TO-220FM
Rohm Semiconductor R8002KND3TL1	MOSFET (Metal Oxide)	1.6 A	150 °C	Surface Mount	140 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3		800 V	N-Channel	4.5 V	20 V	10 V	7.5 nC	4.2 Ohm	TO-252GE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1	$ 1.66
		10	$ 1.63
		100	$ 1.60
		500	$ 1.56
		1000	$ 1.53
		2500	$ 1.49
		5000	$ 1.45

Description

General part information

R8002ANJFRG Series

The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

R8002ANX

Deep-Dive with AI

R8002ANX

Deep-Dive with AI

Technical Specifications

R8002ANJFRG Series

Pricing

Description

R8002ANJFRG Series

Documents

TO220FM Inner Structure

Transistor, MOSFET Flammability

TO-220FM Part Marking

R8002ANJFRG Series