Specification	R8002KND3TL1

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Rds On (Max) @ Id, Vgs	4.2 Ohm
Supplier Device Package	TO-252GE
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

R8002 Series

High-speed Switching, Nch 800V 1.6A, TO-252 (DPAK), Power MOSFET

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Grade	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor R8002KNXC7G	4.2 Ohm	7.5 nC	1.6 A	28 W	20 V	Through Hole	MOSFET (Metal Oxide)	140 pF	800 V	N-Channel	4.5 V	150 °C	10 V	TO-220-3 Full Pack	TO-220FM
Rohm Semiconductor R8002ANJFRGTL	4.3 Ohm	13 nC	2 A	62 W	30 V	Surface Mount	MOSFET (Metal Oxide)		800 V	N-Channel	5 V	150 °C	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	LPTS	Automotive	AEC-Q101	250 pF
Rohm Semiconductor R8002ANX	4.3 Ohm		2 A	35 W	30 V	Through Hole	MOSFET (Metal Oxide)	210 pF	800 V	N-Channel	5 V	150 °C	10 V	TO-220-3 Full Pack	TO-220FM				12.7 nC
Rohm Semiconductor R8002ANJGTL	4.3 Ohm	13 nC	2 A	62 W	30 V	Surface Mount	MOSFET (Metal Oxide)		800 V	N-Channel	5 V	150 °C	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263S			250 pF
Rohm Semiconductor R8002KND3TL1	4.2 Ohm	7.5 nC	1.6 A		20 V	Surface Mount	MOSFET (Metal Oxide)	140 pF	800 V	N-Channel	4.5 V	150 °C	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252GE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.12
		10	$ 1.35
		100	$ 0.92
		500	$ 0.73
		1000	$ 0.67
	Digi-Reel®	1	$ 2.12
		10	$ 1.35
		100	$ 0.92
		500	$ 0.73
		1000	$ 0.67
	N/A	396	$ 1.94
	Tape & Reel (TR)	2500	$ 0.56
Newark	Each (Supplied on Cut Tape)	1	$ 2.19
		10	$ 1.40
		25	$ 1.25
		50	$ 1.09
		100	$ 0.93
		250	$ 0.88
		500	$ 0.83
		1000	$ 0.71

Description

General part information

R8002 Series

The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Documents

Technical documentation and resources

R8002KND3TL1

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R8002KND3TL1

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Technical Specifications

R8002 Series

Pricing

Description

R8002 Series

Documents

Anti-Whisker formation - Transistors

Notes for Temperature Measurement Using Thermocouples

Report of SVHC under REACH Regulation

R8002KND3 ESD Data

Importance of Probe Calibration When Measuring Power: Deskew

List of Transistor Package Thermal Resistance

Precautions When Measuring the Rear of the Package with a Thermocouple

Package Dimensions

Notes for Temperature Measurement Using Forward Voltage of PN Junction

What is a Thermal Model? (Transistor)

Impedance Characteristics of Bypass Capacitor

Notes for Calculating Power Consumption:Static Operation

TO-252_TL1 Taping Information

θ<sub>JC</sub> and Ψ<sub>JT</sub>

About Export Regulations

MOSFET Gate Drive Current Setting for Motor Driving

Method for Monitoring Switching Waveform

θ<sub>JA</sub> and Ψ<sub>JT</sub>

What Is Thermal Design

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Basics of Thermal Resistance and Heat Dissipation

Measurement Method and Usage of Thermal Resistance RthJC

Two-Resistor Model for Thermal Simulation

Condition of Soldering / Land Pattern Reference

Part Explanation

Reliability Test Result

Compliance of the RoHS directive

About Flammability of Materials

R8002KND3 Data Sheet

Temperature derating method for Safe Operating Area (SOA)

Calculation of Power Dissipation in Switching Circuit

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Types and Features of Transistors

Judgment Criteria of Thermal Evaluation

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Moisture Sensitivity Level - Transistors

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

How to Use LTspice&reg; Models: Tips for Improving Convergence

PCB Layout Thermal Design Guide

How to Use LTspice&reg; Models

Explanation for Marking

MOSFET Gate Resistor Setting for Motor Driving

Technical Data Sheet EN

R8002 Series

How to Use LTspice® Models: Tips for Improving Convergence

How to Use LTspice® Models