Discrete Semiconductor Products

SI4909DY-T1-GE3

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MOSFET 2P-CH 40V 8A 8SOIC

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Discrete Semiconductor Products

Active

MOSFET 2P-CH 40V 8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4909DY-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	63 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.2 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SI4909DY-T1-GE3	63 nC	8 A	MOSFET (Metal Oxide)	2000 pF	2 P-Channel	-55 °C	150 °C	Logic Level Gate	Surface Mount	40 V	8-SOIC	8-SOIC	3.9 mm	0.154 in	2.5 V	27 mOhm	3.2 W

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General part information

Mosfet Array 40V 8A 3.2W Surface Mount 8-SOIC

Technical documentation and resources