SI4909 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2P-CH 40V 8A 8SOIC
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 63 nC | 8 A | MOSFET (Metal Oxide) | 2000 pF | 2 P-Channel | -55 °C | 150 °C | Logic Level Gate | Surface Mount | 40 V | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | 2.5 V | 27 mOhm | 3.2 W |