Specification	NXH040F120MNF1PG

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	122.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1505 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max	74 W
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	22-PIM
Supplier Device Package [x]	33.8
Supplier Device Package [y]	42.5
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.3 V

NXH040P120MNF1 Series

SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET

Part	Vgs(th) (Max) @ Id	Configuration	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]
ON Semiconductor NXH040F120MNF1PG	4.3 V	4 N-Channel	56 mOhm	-40 C	175 °C	30 A	Silicon Carbide (SiC)	Chassis Mount	74 W	122.1 nC	22-PIM	33.8	42.5	Module	1505 pF	1200 V	1.2 kV
ON Semiconductor NXH040P120MNF1PG	4.3 V	2 N-Channel (Dual) Common Source	56 mOhm	-40 °C	150 °C	30 A	Silicon Carbide (SiC)	Chassis Mount		122.1 nC				Module	1505 pF	1200 V	1.2 kV	74 W
ON Semiconductor NXH040F120MNF1PTG	4.3 V	4 N-Channel	56 mOhm	-40 C	175 °C	30 A	Silicon Carbide (SiC)	Chassis Mount	74 W	122.1 nC	22-PIM	33.8	42.5	Module	1505 pF	1200 V	1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NXH040P120MNF1 is a SiC MOSFET module containing a 40 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.