NXH040P120MNF1PG

Active

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 30 A, 1.2 KV, 0.042 OHM, MODULE

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 30 A, 1.2 KV, 0.042 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	NXH040P120MNF1PG

Configuration	2 N-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	122.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1505 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	74 W
Rds On (Max) @ Id, Vgs	56 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.3 V

SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET

Part	Vgs(th) (Max) @ Id	Configuration	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]
ON Semiconductor NXH040F120MNF1PG	4.3 V	4 N-Channel	56 mOhm	-40 C	175 °C	30 A	Silicon Carbide (SiC)	Chassis Mount	74 W	122.1 nC	22-PIM	33.8	42.5	Module	1505 pF	1200 V	1.2 kV
ON Semiconductor NXH040P120MNF1PG	4.3 V	2 N-Channel (Dual) Common Source	56 mOhm	-40 °C	150 °C	30 A	Silicon Carbide (SiC)	Chassis Mount		122.1 nC				Module	1505 pF	1200 V	1.2 kV	74 W
ON Semiconductor NXH040F120MNF1PTG	4.3 V	4 N-Channel	56 mOhm	-40 C	175 °C	30 A	Silicon Carbide (SiC)	Chassis Mount	74 W	122.1 nC	22-PIM	33.8	42.5	Module	1505 pF	1200 V	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 111.66
		10	$ 101.93
		28	$ 97.25
		84	$ 92.21
Newark	Each	1	$ 96.66
ON Semiconductor	N/A	1	$ 60.28

General part information

The NXH040P120MNF1 is a SiC MOSFET module containing a 40 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.