STL15DN4F5
ActiveAUTOMOTIVE-GRADE DUAL N-CHANNEL 40 V, 8 MOHM TYP.,15 A STRIPFET F5 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
STL15DN4F5
ActiveAUTOMOTIVE-GRADE DUAL N-CHANNEL 40 V, 8 MOHM TYP.,15 A STRIPFET F5 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL15DN4F5 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1550 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 60 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL15DN4F5 Series
This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET F5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in class.Designed for automotive applications and AEC-Q101 qualifiedExtremely low on-resistance RDS(on)Very low gate chargeLow gate drive power lossWettable flank package option
Documents
Technical documentation and resources