Discrete Semiconductor Products

AOW11N60

NRND

MOSFET N-CH 600V 11A TO262

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Discrete Semiconductor Products

NRND

MOSFET N-CH 600V 11A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW11N60

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	1990 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	272 W
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Alpha & Omega Semiconductor Inc. AOW11S65	10 V	650 V	11 A	198 W	13.2 nC	150 °C	-55 °C	646 pF	30 V	MOSFET (Metal Oxide)	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	4 V	TO-262	N-Channel	399 mOhm
Alpha & Omega Semiconductor Inc. AOW11N60	10 V	600 V	11 A	272 W		150 °C	-55 °C		30 V	MOSFET (Metal Oxide)	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	4.5 V	TO-262	N-Channel	700 mOhm	1990 pF

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