Discrete Semiconductor Products

NDS356P

Obsolete

ON Semiconductor

MOSFET P-CH 20V 1.1A SUPERSOT3

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Discrete Semiconductor Products

NDS356P

Obsolete

ON Semiconductor

MOSFET P-CH 20V 1.1A SUPERSOT3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NDS356P

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2.5 V

NDS356AP Series

-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
ON Semiconductor NDS356AP	P-Channel	1.1 A	MOSFET (Metal Oxide)	30 V	2.5 V	280 pF	500 mW	-55 °C	150 °C	20 V	SC-59 SOT-23-3 TO-236-3	SOT-23-3	200 mOhm	4.5 V 10 V	Surface Mount
ON Semiconductor NDS356AP-NB8L005A	P-Channel	1.1 A	MOSFET (Metal Oxide)	30 V	2.5 V	280 pF	500 mW	-55 °C	150 °C	20 V	SC-59 SOT-23-3 TO-236-3	SOT-23-3	200 mOhm	4.5 V 10 V	Surface Mount
ON Semiconductor NDS356P	P-Channel	1.1 A	MOSFET (Metal Oxide)	20 V	2.5 V	180 pF	500 mW	-55 °C	150 °C	12 V	SC-59 SOT-23-3 TO-236-3	SOT-23-3		4.5 V 10 V	Surface Mount	5 nC	210 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NDS356AP Series

SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Documents

Technical documentation and resources