Discrete Semiconductor Products
FDN86501LZ
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 60 V, 2.6 A, 116 MΩ
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Discrete Semiconductor Products
FDN86501LZ
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 60 V, 2.6 A, 116 MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDN86501LZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 5.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 335 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) @ Id, Vgs | 116 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.74 | |
| 10 | $ 1.77 | |||
| 100 | $ 1.22 | |||
| 500 | $ 0.99 | |||
| 1000 | $ 0.91 | |||
| Digi-Reel® | 1 | $ 2.74 | ||
| 10 | $ 1.77 | |||
| 100 | $ 1.22 | |||
| 500 | $ 0.99 | |||
| 1000 | $ 0.91 | |||
| Tape & Reel (TR) | 3000 | $ 0.84 | ||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 1.06 | |
| 6000 | $ 1.01 | |||
| 12000 | $ 0.91 | |||
| 18000 | $ 0.87 | |||
| 30000 | $ 0.84 | |||
| ON Semiconductor | N/A | 1 | $ 0.77 | |
Description
General part information
FDN86501LZ Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Documents
Technical documentation and resources