Discrete Semiconductor Products
STL40DN3LLH5
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL 30 V, 0.016 OHM TYP., 11 A STRIPFET H5 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
Discrete Semiconductor Products
STL40DN3LLH5
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL 30 V, 0.016 OHM TYP., 11 A STRIPFET H5 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL40DN3LLH5 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 40 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 4.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 475 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 60 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL40DN3LLH5 Series
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources
