Discrete Semiconductor Products

STW52NK25Z

NRND

STMicroelectronics

N-CHANNEL 250 V, 33 MOHM TYP., 52 A, SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

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DocumentsSTW52NK25Z | Datasheet +17

Discrete Semiconductor Products

STW52NK25Z

NRND

STMicroelectronics

N-CHANNEL 250 V, 33 MOHM TYP., 52 A, SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsSTW52NK25Z | Datasheet +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW52NK25Z

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STW52NK25Z Series

N-channel 250 V, 33 mOhm typ., 52 A, SuperMESH Power MOSFET in a TO-247 package

Part	Technology	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type
STMicroelectronics STW52NK25Z	MOSFET (Metal Oxide)	TO-247-3	300 W	4.5 V	TO-247-3	52 A	10 V	45 mOhm	250 V	30 V	Through Hole	160 nC	150 °C	-55 °C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	597	$ 7.03
Newark	Each	1	$ 8.61
		10	$ 8.60
		25	$ 5.81
		50	$ 5.51
		100	$ 5.21
		250	$ 4.81

Description

General part information

STW52NK25Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.