Discrete Semiconductor Products

SISH114ADN-T1-GE3

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MOSFET N-CH 30V 18A/35A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 18A/35A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISH114ADN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	39 W, 3.7 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SISH114ADN-T1-GE3	-55 °C	150 °C	20 V	4.5 V 10 V	18 A 35 A	PowerPAK® 1212-8SH	MOSFET (Metal Oxide)	7.5 mOhm	30 V	Surface Mount	2.5 V	32 nC	N-Channel	3.7 W 39 W	PowerPAK® 1212-8SH	1230 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 18A (Ta), 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources