SISH114 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 18A/35A PPAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Type | Power Dissipation (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 20 V | 4.5 V 10 V | 18 A 35 A | PowerPAK® 1212-8SH | MOSFET (Metal Oxide) | 7.5 mOhm | 30 V | Surface Mount | 2.5 V | 32 nC | N-Channel | 3.7 W 39 W | PowerPAK® 1212-8SH | 1230 pF |