Specification	FQA170N06

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	290 nC
Input Capacitance (Ciss) (Max) @ Vds	9350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs [Max]	5.6 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQA170N06 Series

Power MOSFET, N-Channel, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P

Part	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id
ON Semiconductor FQA170N06	60 V	MOSFET (Metal Oxide)	TO-3PN	Through Hole	375 W	10 V	290 nC	5.6 mOhm	-55 °C	175 ░C	N-Channel	25 V	9350 pF	SC-65-3 TO-3P-3	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.64

Description

General part information

FQA170N06 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.