
MASTERGAN3
ActiveHIGH POWER DENSITY 600 V HALF BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
Deep-Dive with AI
Search across all available documentation for this part.

MASTERGAN3
ActiveHIGH POWER DENSITY 600 V HALF BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MASTERGAN3 |
|---|---|
| Applications | DC-DC Converters |
| Current - Output / Channel | 6.5 A, 4 A |
| Current - Peak Output | 12 A, 7 A |
| Fault Protection | Reverse Current, Current Limiting (Adjustable), Over Temperature, UVLO, Open Load Detect, Over Voltage |
| Features | Bootstrap Circuit |
| Interface | Logic |
| Load Type | Inductive, Capacitive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 31-VQFN Exposed Pad |
| Rds On (Typ) | 450 mOhm, 225 mOhm |
| Supplier Device Package | 31-QFN (9x9) |
| Technology | DMOS |
| Voltage - Load [Max] | 600 V |
| Voltage - Supply [Max] | 15 V |
| Voltage - Supply [Min] | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 3.34 | |
Description
General part information
MASTERGAN3 Series
The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.
The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON)of 225 mΩ and 450 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN3 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
Documents
Technical documentation and resources