JANKCB2N5416
Active300 V POWER BJT DIE ROHS COMPLIANT: YES
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JANKCB2N5416
Active300 V POWER BJT DIE ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JANKCB2N5416 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 750 mW |
| Qualification | MIL-PRF-19500/485 |
| Supplier Device Package | TO-5 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 100 | $ 119.63 | |
| Microchip Direct | N/A | 1 | $ 128.83 | |
| Newark | Each | 100 | $ 119.63 | |
| 500 | $ 115.03 | |||
Description
General part information
JANKCB2N5416-Transistor-Die Series
This specification covers the performance requirements for PNP, silicon, switching, 2N5415 and 2N5416 transistors, complimentary to 2N3439 and 2N3440 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/485. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources