
NTB5411NT4G
ObsoletePOWER MOSFET 60V 80A 10 MOHM SINGLE N-CHANNEL D2PAK
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NTB5411NT4G
ObsoletePOWER MOSFET 60V 80A 10 MOHM SINGLE N-CHANNEL D2PAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | NTB5411NT4G |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 130 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 166 W |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTB5412N Series
The NTD/NTB/NTP54xxN series of advanced planar 60 V N-Channel Power MOSFETs is ideal for use in DC motor drives, LED drivers, power supplies, converters, pulse width modulation (PWM) controls and bridge circuits, where diode speed and commutating safe operating areas are crucial and benefit from an additional safety margin against unexpected voltage transients that these devices provide.
Documents
Technical documentation and resources