NTB5412N Series

Power MOSFET 40V, 167A, 4.5 mOhm, Single N-Channel, D2PAK.

Catalog

Power MOSFET 40V, 167A, 4.5 mOhm, Single N-Channel, D2PAK.

Part	Vgs(th) (Max) @ Id	Qualification	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Grade	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
ON Semiconductor NVB5405NT4G	3.5 V	AEC-Q101	N-Channel	5.8 mOhm	3 W 150 W	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	16.5 A 116 A	4000 pF	40 V	D2PAK	Surface Mount	10 V	5 V	-55 °C	175 ░C	88 nC	MOSFET (Metal Oxide)
ON Semiconductor NTB5411NT4G	4 V		N-Channel	10 mOhm			D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V		4500 pF	60 V	D2PAK	Surface Mount			-55 °C	175 ░C		MOSFET (Metal Oxide)	130 nC	10 V	166 W
ON Semiconductor NTB5405NG	3.5 V		N-Channel	5.8 mOhm	3 W 150 W		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	116 A	4000 pF	40 V	D2PAK	Surface Mount	10 V	5 V	-55 °C	175 ░C	88 nC	MOSFET (Metal Oxide)
ON Semiconductor NVB5404NT4G
ON Semiconductor NTB5412NT4G	4 V		N-Channel		125 W		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	60 A	3220 pF	60 V	D2PAK	Surface Mount			-55 °C	175 ░C		MOSFET (Metal Oxide)	85 nC	10 V

Catalog

Power MOSFET 40V, 167A, 4.5 mOhm, Single N-Channel, D2PAK.

Key Features

• Low RDS(on)

• High Current Capability

• Low Gate Charge

• RoHS Compliant

• AEC−Q101 Qualified and PPAP Capable − NVB5405N

Description

The NTD/NTB/NTP54xxN series of advanced planar 60 V N-Channel Power MOSFETs is ideal for use in DC motor drives, LED drivers, power supplies, converters, pulse width modulation (PWM) controls and bridge circuits, where diode speed and commutating safe operating areas are crucial and benefit from an additional safety margin against unexpected voltage transients that these devices provide.