Specification	FDB9503L-F085

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	255 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	333 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

FDB9503L_F085 Series

P-Channel PowerTrench® MOSFET, -40 V, -110 A, 2.6 mΩ

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Grade	Rds On (Max) @ Id, Vgs	Technology	Qualification	Vgs (Max)	Supplier Device Package	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDB9503L-F085	3 V	255 nC	333 W	4.5 V 10 V	Automotive	2.6 mOhm	MOSFET (Metal Oxide)	AEC-Q101	16 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	P-Channel	110 A	40 V	Surface Mount	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel PowerTrench®MOSFET, -40 V, -110 A, 2.6 mΩ

Technical documentation and resources