P-Channel PowerTrench<sup>®</sup> MOSFET, -40 V, -110 A, 2.6 mΩ
P-Channel PowerTrench<sup>®</sup> MOSFET, -40 V, -110 A, 2.6 mΩ
P-Channel PowerTrench<sup>®</sup> MOSFET, -40 V, -110 A, 2.6 mΩ
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Grade | Rds On (Max) @ Id, Vgs | Technology | Qualification | Vgs (Max) | Supplier Device Package | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 3 V | 255 nC | 333 W | 4.5 V 10 V | Automotive | 2.6 mOhm | MOSFET (Metal Oxide) | AEC-Q101 | 16 V | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | P-Channel | 110 A | 40 V | Surface Mount | -55 °C | 175 ░C |